Effects Of The Uv Laser Radiation On The Surface Defects Of The Nio Catalysts.
FIFTH CONFERENCE ON OPTICS (ROMOPTO '97), PTS 1 AND 2(1998)
摘要
NiO is a metal-deficient p-type semiconductor with surface defects which are correlated with the non-stoichiometry. The dissociative Hz adsorption on the NiO surface takes place on oxygen-excess sites (over equilibrium). The H-2 TPD spectra vary significantly with calcination temperature (stoichiometry) and chemical treatment. UV laser radiation enhances H-2 adsorption on the defective surfaces (non-stoichiometric) as compared with the stoichiometric ones, even chemically treated.The fourth harmonic (FH) of a Q-switched Nd:YAG laser is used for the NiO samples irradiation The wavelength of the UV laser radiation is 266nm, under the band-gap of the semiconductor.
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关键词
NiO, nonstoichiometry, surface defects, H-2 adsorption, UV radiation, Nd : YAG laser
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