Corrigendum to “Evolution of epitaxial graphene layers on 3C SiC/Si (1 1 1) as a function of annealing temperature in UHV” [Carbon 68 (2014) 563–572]B P Gupta,Marco Notarianni,Neeraj Mishra,M Shafiei,F Iacopi,Nunzio MottaCarbon（2015）引用 6|浏览3暂无评分AI 理解论文溯源树样例生成溯源树，研究论文发展脉络Chat Paper正在生成论文摘要
