Epitaxial growth of coaxial GaInN-GaN hetero-nanotubes

F Scholz,S B Thapa,Mohamed Fikry,J Hertkorn,Thomas Wunderer,Frank Lipski,A Reiser, Yahong Xie,M Feneberg,Klaus Thonke, R Sauer, M Durrschnabel, L D Yao,Dagmar Gerthsen

IOP Conference Series-Materials Science and Engineering（2009）

Cited 8|Views3

No score

Abstract

We report about the successful realization of a coaxial hetero structure grown by MOVPE around ZnO nanocolumns. At higher overgrowth temperatures, the ZnO cores completely dissolved leaving GaN nanotube structures with excellent properties. Such tubes could be sheathed by a GaInN-GaN single quantum well structure, as confirmed by photoluminescence and transmission electron microscopy.

Translated text

Key words

transmission electron microscopy,epitaxial growth

AI Read Science

Must-Reading Tree

Example

Generate MRT to find the research sequence of this paper

Chat Paper

Summary is being generated by the instructions you defined