Ab-Initio Analysis of Impurity Added Benzene Based Multi-Island Single-Electron Transistor

The impurity added benzene based single-island and multi-island single-electron transistor (MI-SET) has been analysed using ab initio approach, based on density functional theory and non-equilibrium Green's function. This transistor consists of two molecules (as islands) of benzene placed above the dielectric substrate between the source and drain electrode for weak coupling where boron and nitrogen has been used as an impurity element in the benzene based molecular island. The system has been modelled in such a way that the MI-SET works in coulomb blockade regime. The charging energies of the system have been evaluated and discussed in both the single as well as multi-island SET environments. The dependence of conductance of SET on external bias potential and gate voltage has been justified through charge stability diagrams.