Effect Of Polarity On A Sic Crystal Grown On A Sic Dual-Seed Crystal By Using The Pvt Method

SiC Crystal ingots were grown on 4H-SiC dual-seed crystals by using a physical vapor transport (PVT) technique and Si C crystal wafers and cross sections sliced from the SiC ingot were systematically investigated to find the polarity dependence of the crystal polytype. The growth rate of the SiC crystal gown in this study was about 0.15 mm/hr. N-type 2-inch SiC crystals exhibiting 4H- and 6H-SiC polytypes were successfully fabricated on the C-face and the Si-face, respectively. As the growth of the SIC crystal ingot proceeded, the SiC crystal region grown on the C-face seed crystal was enlarged compared to the SIC crystal region grown on the Si-face seed crystal. The incorporation of nitrogen donors and the growth rate in the SiC crystals grown on the C-face seed crystal were be higher than those in SiC crystals grown on a Si-face crystal.