High-Energy-Electron-Beam Induced Oxidation Of An Aluminum Film

The surface properties of Al thin films (500 angstrom) modified by irradiation with high-energy electron beams (0.3, 1, or 2 MeV with a flux of 7 x 10(8) electrons.cm(-2).s(-1)) have been investigated using synchrotron-radiation photoelectron emission spectroscopy. No morphological changes were observed, but increased oxidation of the Al films was observed when they were irradiated for longer than 40 min. Selective oxidation of the irradiated regions of the Al films was achieved using shadow masking. A scanning photoemission electron microscopy image at the O l s core level clearly showed spatially resolved oxidation contrast in the Al layer.