Boron-Related Defects in Low Temperature Irradiated Silicon

The FTIR absorption studies of boron-doped silicon irradiated at 80 K by 5 MeV electrons have shown the recombination-enhanced migration of the interstitial boron by the Bourgoin-Corbett mechanism. The interaction of diffusing atoms of Bi with one another and with atoms of interstitial oxygen was revealed. For as-irradiated samples we observed the appearance of three LVMs at 739.4, 759.6, and 780.9 cm-1, which are attributed to BiBi complex, and the LVM at 923.5 cm-1, which are identified as BiOi complex.