Deposition of O atomic layers on Si(100) substrates for epitaxial Si-O superlattices: investigation of the surface chemistry

•Atomic layer is deposited by O3 chemisorption reaction on H-terminated Si(100).•O-content has critical impact on the epitaxial thickness of the above-deposited Si.•Oxygen atoms at dimer/back bond configurations enable epitaxial Si on O atomic layer.•Oxygen atoms at hydroxyl and more back bonds, disable epitaxial Si on O atomic layer.