Characterization for N- and P-type 3C-SiC on Si (1 0 0) substrate with thermal anneal and pulsed excimer laser anneal

Thermal and pulsed excimer laser treatments have been applied for the post-implant anneals of Al- and N-implanted 3C-SiC samples to recover crystal damage caused by the ion implantation. FTIR reflectivity spectra show that the thermal anneal carried out at 1350 degrees C for 30 min has the better damage recovery in a range of the reststrahlen bands of both Al- and N-implanted samples. However, shoulders in the XRD spectra caused by the implantation indicate that a thermal anneal cannot completely recover the damage throughout an entire sample. For the Al-implanted samples, laser pulses with various energy densities can move shoulders to higher 2 theta angles and then merge shoulders with the major peaks at the total energy density of 583.7 J/cm(2). 150 shots of laser pulses at the energy density of 256 mJ/cm(2) and combining with other energy densities can be used to recover damage in a range of the reststrahlen band which is induced by laser irradiation. Furthermore, the damage caused by the implantation in N-implanted samples is not close to the major peak in the XRD spectra, which can be improved by the laser pulses as well, but not moved to higher 2 theta angles. However, the applied energy densities create extra damage in a range of the reststrahlen band. (C) 2012 Elsevier B.V. All rights reserved.