Study of the La-related dipole in TiN/LaO x /HfSiON/SiON/Si gate stacks using hard X-ray photoelectron spectroscopy and backside medium energy ion scattering

R Boujamaa,E Martinez,F Pierre,O Renault,B Detlefs,J Zegenhagen,S Baudot,M Grosjean,F Bertin,C Dubourdieu

Applied Surface Science（2015）

引用 8|浏览42

暂无评分

摘要

•Precise La depth distribution in gate stacks before and after annealing by MEIS.•Analysis by HAXPES of the buried high K/SiO2 interface without removing TiN gate.•Formation of La-silicate at the HfSiON/SiON interface.•Internal electrical field induced at the HfSiON/SiON interface by the La diffusion.•Increase of electric field strength with initial LaOx thickness.

查看译文

关键词

High K,Hafnium silicate,Lanthanum,MEIS,HAXPES,Electric dipole

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要