Band alignments at interface of ZnO/FAPbI 3 heterojunction by X-ray photoelectron spectroscopy

Tao Ding,Ruifeng Li,Weiguang Kong,Bingpo Zhang,Huizhen Wu

Applied Surface Science（2015）

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摘要

•The band alignments at ZnO/HC(NH2)2PbI3 interface were measured by XPS.•The valence-band offset was determined to be 1.86±0.10eV.•The conduction-band offset was concluded to be 0.05±0.10eV.•The ZnO/FAPbI3 heterojunction has a type-I band alignment.•The desired band alignment is benefit for the new generation of solar cells.

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关键词

Band alignments,Heterojunction,FAPbI3,ZnO,X-ray photoelectron spectroscopy

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