MOVPE growth and characterization of heteroepitaxial germanium on silicon using iBuGe as precursor

Giovanni Attolini,J S Ponraj,Cesare Frigeri,Elisa Buffagni,Christian Ferrari,N Musayeva,Rasim Jabbarov,Matteo Bosi

Applied Surface Science（2016）

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摘要

•Germanium layer were deposited on silicon substrates.•A novel metal organic precursor (isobutyl germane) was used.•MOVPE growth process was optimized.•Layers were characterized by TEM, XRD; SEM and AFM.

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关键词

Germanium,Epitaxy,Isobutyl germane,MOVPE,Characterization

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