Analysis of surface states in ZnO nanowire field effect transistors

Ye Shao,Jongwon Yoon,Hyeongnam Kim,Takhee Lee,Wu Lu

Applied Surface Science（2014）

引用 6|浏览3

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摘要

•The electron transport in ZnO nanowire FETs is space charged limited below a trap temperature.•Metallic contacts to ZnO nanowires exhibit non-linear behavior with a Schottky barrier height of ∼0.35eV.•The surface state density is in the range of 1.04×1010–1.24×1010/cm2.•The trap activation energy is ∼0.26eV.

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关键词

ZnO NW,Surface states,Field effect transistors,Device modeling

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