Solid state reaction of ruthenium with silicon carbide, and the implications for its use as a Schottky contact for high temperature operating Schottky diodes

•Ruthenium was deposited on 4H-SiC to study interface reactions.•Ru-4H-SiC Schottky diodes with nickel as ohmic contact were fabricated.•RBS analysis indicated Ru2Si3 formation at 700°C, and Ru diffusion at 600°C.•Raman spectroscopy indicated graphite formation at 1000°C.•The Schottky barrier diodes were still functional after 1000°C vacuum annealing.