Amorphous Ni–Zr layer applied for microstructure improvement of Ni-based ohmic contacts to SiC
Materials Science and Engineering: B(2015)
摘要
•Thin Ni–Si layers on SiC were studied after annealing.•Different types of microstructural defects occur depending on Ni:Si ratio.•Mechanisms leading to morphology degradation are discussed.•Presented method improves the microstructure of ohmic contacts to SiC.
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关键词
Ohmic contact,Silicon carbide,Nickel silicides,Microstructure,Diffusion barrier,Zirconium
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