Improving reliability through nitrogen purge of carriers
2015 26TH ANNUAL SEMI ADVANCED SEMICONDUCTOR MANUFACTURING CONFERENCE (ASMC)(2015)
摘要
Decreasing insulator thickness at many levels of recent technology nodes raises concern for reliability. We apply a stress test inline, using a specially designed structure. It was found that reliability was strongly affected by queue time between a dry and wet etch step of a spacer, likely due to remaining RIE induced damage. By applying nitrogen purge of the wafer carrier the susceptibility to failure can be completely eliminated. This points to a fail mechanism related to residual etch products.
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关键词
reliability,yield,RIE,Nitrogen purge
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