X-Band receiver front-end in fully depleted SOI technology

P L Orlando,K M Groves,A Mattamana,T Quach,Paul Watson,L M Johnson,P W Wyatt,C L Chen,R Drangmeister,Craig L Keast

ICUWB（2012）

Cited 0|Views44

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Abstract

This paper describes a wide band/high dynamic range receiver implemented in a 0.18-μm fully-depleted silicon-on-insulator (FDSOI) CMOS technology. The system demonstration is a single conversion architecture with RF input at X-Band and IF output at S-Band. The receiver yielded 20-21.5 dB conversion gain, 5.6-6 dB noise figure, and 16.7 dBm OIP3 across a 600-MHz instantaneous bandwidth at S-Band operation.

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Key words

gain,noise figure,radio frequency,cmos integrated circuits,filter,balun,cmos,low noise amplifier,silicon on insulator,impedance matching

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