A 4-Way 0.11thz Power Synthesizer Based On Impatt Source

2015 40TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER AND TERAHERTZ WAVES (IRMMW-THZ)(2015)

引用 23|浏览27
暂无评分
摘要
The lack of high frequency source with a simple structure and enough power output at THz band limit the development of terahertz technology. As a result achieving high-power THz radiation has attracted many efforts. In this paper, we investigate the possibility of power synthesis at 0.11THz based on discrete sources. The simulation and test results show that with a precision digital phase control, a power synthesizer at 0.11THz band can be achieved. For demonstration, we implement a 0.11THz prototype system employing solid-state impact avalanche and transit time (IMPATT) diodes. The method mentioned in this paper may be have a wide foreground in THz at higher frequency by increasing the digital bit width and give a more precise phase control.
更多
查看译文
关键词
power synthesizer,IMPATT diode source,THz band limit,terahertz technology,high-power THz radiation,discrete source,digital phase control,impact avalanche and transit time,frequency 0.11 THz
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要