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Nanomechanical studies of doped InGaP/GaAs epilayers

Dipika Robidas,K R Deepthi,C Arunseshan,Giovanni Attolini,Matteo Bosi,D Arivuoli

AIP Conference Proceedings（2013）

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Abstract
The Nanomechanical characteristics of InGaP semiconductor alloys doped with Si and Zn grown on GaAs (100) semi-insulating substrate is studied. The mechanical characteristics of the material such as hardness, stiffness, contact depth etc. were studied byNanoindentation technique with different probe geometries like Berkovich and Vickers. The results show significant variation in the mechanical parameters with respect to the tip geometry and dopant concentration.
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Key words
Nanoindentation,InGaP,Hardness,Reduced modulus,nanomechanical
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