Ultra Thin Body Single Gate Nanoscale Dopingless Si:Ge Heterostructure Junctionless Tunnel Field Effect Transistor

In this paper, we propose nanometer scale single gate ultra thin body intrinsic dopingless Hetero-Junctionless Tunnel Field Effect Transistor (H-JLTFET) using charge plasma concept for low power applications. Characteristics of TFETs (having low leakage) are improved by JLTFETs through blending advantages of Junctionless FETs (with high on current). Use of junctionless channel provides solution from problems associated with random dopant fluctuations. Simulations resulted in I-OFF of similar to 4 x 10(-17) A/mu m, ION of similar to 4 mu A/mu m, I-ON/I-OFF of 10(11) and subthreshold slope of 54 mV/dec for PolyGate/SiO2/Si: Ge H-JLTFET at temperature of 300 K, gate length of 40 nm, oxide thickness of 2 nm, film thickness of 10 nm, low-k spacer thickness of 5 nm and V-DD of 1.0 V.