Structure and method to modulate threshold voltage for high-K metal gate field effect transistors (FETs)Bruce B Doris,Kangguo Cheng,Steven J Holmes,Ali Khakifirooz,Pranita Kulkarni,Shom Ponoth,Raghavasimhan Sreenivasan,Stefan Antonius Schmitzmag（2015）引用 23|浏览64AI 理解论文溯源树样例生成溯源树，研究论文发展脉络Chat Paper正在生成论文摘要
