About the physical origin of pixel flickering in cooled Hg0.7Cd0.3Te infrared photodetectors
AIP Conference Proceedings(2005)
摘要
We report on electrical noise measurements on both Hg0.7Cd0.3Te test patterns and hybrid 320 x 256 focal plane array in order to explain the low frequency pixel flickering physical origin. Dark and under infrared illumination test patterns characterization highlights that the detector chip isn't responsible for the flickering phenomenon. Taking into account the silicon readout chip influence when the full IRCMOS infrared detector is investigated, the indium bump based interconnecting system is finally pointed out as a potential excess noise source.
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关键词
HgCdTe,infrared photodetector,pixel,1/f noise,detectivity,RTS,IRCMOS,indium bump
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