A Comparative Study Of Mos Memory Structures That Contain Platinum Or Gold Nanoparticles

In this work, electrical characteristics of two types MOS memory structures: one that contains platinum and one that contains gold nanoparticles, embedded between two dielectric layers, a thin tunneling SiO2 and a thicker HfO2 control layer has been compared. The nanoparticles are formed during simple electron-gun deposition of a very small quantity of platinum or gold, at room temperature, on 3.5 nm of SiO2, which was thermally grown on a Si wafer. The nanoparticles are formed without any annealing. Then, they are capped with a HfO2 layer.