Low Variability Resistor–Memristor Circuit Masking the Actual Memristor States

A memristor device is demonstrated that produces uniform and controllable resistance switching by placing fixed resistors in series and in parallel with a memristor. The experiments utilize a Pt/Ta2O5/Ta crosspoint device that yielded a coefficient of variation, or relative standard deviation, less than 0.005 for both low resistance (R (ON)) and high resistance (R (OFF)) states.