Microfluidic alignment and trapping of 1D nanostructures – a simple fabrication route for single-nanowire field effect transistors
RSC ADVANCES(2015)
Abstract
We present a simple method to microfluidically align and trap 1D nanostructures from suspension at well-defined positions on a receiver substrate for the fabrication of single-nanowire field effect transistors (NWFETs). Our approach allows for subsequent contacting of deposited NWs via standard UV-lithography. We demonstrate that silicon as well as copper(II)oxide NWs can be processed, and that up to 13 out of 32 designated trapping sites are occupied with single-NW FETs.
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Key words
Tunnel Field-Effect Transistors,Nanosensors,Nanoelectronics,Nanowire Transistors
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