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Advanced Hbt Microelectronics At Northrop Grumman Space Technology

A. Gutierrez-Aitken,C. Monier, P. Chang,D. Scott,K. Sato,E. Kaneshiro,B. Oyama,B. Chan,E. Kunkee,K. Loi,D. Sawdai,A. Cavus,A. Oki

2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM)（2008）

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Abstract
Northrop Grumman Space Technology (NGST) is developing advanced InP-based HBT microelectronics for next generation high performance aerospace, defense and commercial applications. In this paper we describe these production and advanced technologies including a 0.25 um InP HBT. We present device description, performance, and circuit demonstrations for these technologies
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InP,HBTs,III-V semiconductors,high-speed microelectronics
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