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GaN: From Selective Area to Epitaxial Lateral Overgrowth

X. Li,S. G. Bishop,J. J. Coleman

MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH（2020）

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Abstract
The evolution of the topography of GaN stripes as a function of stripe width (2–120 μm), fill factor and substrate smoothness has been explored. The spatially resolved optical properties of these structures have been characterized by cathodoluminescence imaging and line scans. Implications from the optical study have been discussed.
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gan,selective area
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