Sige Base Bipolar Technology With 74 Ghz F(Max) And 11 Ps Gate Delay
INTERNATIONAL ELECTRON DEVICES MEETING, 1995 - IEDM TECHNICAL DIGEST（1995）
关键词
boron,oscillations,hbt,epitaxial growth,doping,cutoff frequency,capacitance
AI 理解论文
溯源树
样例
生成溯源树，研究论文发展脉络
Chat Paper
正在生成论文摘要