Selected techniques for examining the electrical, optical and spatial properties of extended defects in semiconductors

Three methods in semiconductor defect analysis are described with examples and appraisal of their capabilities: An electron beam induced current method (R-EBIC) is shown to determine the sense of band bending at grain boundaries in the CdTe-CdS system. Cathodoluminescence in the TEM has demonstrated a link between stacking faults and 3.26eV luminescence in GaN. Statistical analysis of spatial pattern applied to 'v-pit' distributions in InGaN structures on sapphire demonstrates the pits to be correlated on the scale of 60-120nm.