Record Pvcr Gaas-Based Tunnel Diodes Fabricated On Si Substrates Using Aspect Ratio Trapping

High quality, low defect GaAs virtual substrates on Si, produced by the Aspect Ratio Trapping growth technique, have been used for the fabrication of n(+)GaAs/n(+)InGaAs/p(+)GaAs Esaki diodes. All epitaxial layers were grown by reduced-pressure chemical vapor deposition/metalorganic chemical vapor deposition, instead of the molecular beam epitaxy technique commonly used for most high performance Esaki diodes. Four Esaki diode structures were fabricated and measured, with current densities up to 1 kA/cm(2). Peak-to-valley current ratios up to 56 have been achieved, which is greater than twice that of the best GaAs Esaki diodes previously reported.