Optimization Of 193 Nm Single Layer Resists Through Statistical Design

Through a series of statistical design experiments we optimized the lithographic performance of a 193 nm single layer resist based on a norbornene-maleic anhydride matrix resin. Several interesting findings were found including that having the FEB temperature higher than the SE temperature improved the performance of the resist. The polymer composition was found to strongly influence the lithographic performance of the resist. Variables that we examined included acrylate loading and blocking level. By optimizing the composition of the polymer, we have obtained resists with high etch resistance, square profiles and 0.130 micron dense line ultimate resolution in 0.5 micron thick films. The resist formulations are compatible with industry standard 0.262 N TMAH. During exposure the resist does not suffer from the outgassing of volatile species (less than 1e(12) molecules/cm(2)x sec).