High speed silicon-based lateral junction photodetectors having recessed electrodes and thick oxide to reduce fringing fields E Bassous, J M Halbout,S S Iyer,Rajiv V Joshi,V P Kesan, Michael R Scheuermann, Massimo Ghionimag（1996）引用 56|浏览1暂无评分AI 理解论文溯源树样例生成溯源树，研究论文发展脉络Chat Paper正在生成论文摘要
