The Second Stage of a Thin Wafer IGBT Low Loss 1200V LPT-CSTBT™ with a Backside Doping Optimization Process

Ken Nakamura,Yoshiaki Hisamoto, Toshiro Matsumura,T Minato,J Moritani

mag(2006)

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关键词
high voltage,leakage current,bipolar transistors,voltage,annealing,ion implantation,carrier lifetime,bipolar transistor,temperature
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