Accurate Determination Of Electronic Transport Parameters In Multi-Carrier And Multi-Layer Hgcdte Structures

A study is presented of multicarrier electronic transport parameters in HgCdTe films extracted through use of advanced mobility spectrum analysis techniques. It is shown that even in single layer long-wave infrared HgCdTe epitaxial films three well-defined electron species associated with the surface, bulk and substrate-interface regions can be accurately discriminated. Furthermore, it is also shown that the application of high-resolution quantitative mobility spectrum analysis techniques allows the accurate extraction of the individual transport parameters of carriers in complex multi-layer HgCdTe heterostructures.