Enabling 3d Interconnects With Metal Direct Bonding

Lea Di Cioccio,Pierric Gueguen,Thomas Signamarcheix,Maurice Rivoire, D. Scevola, Regis Cahours,Patrick Leduc,M. Assous,Laurent Clavelier

PROCEEDINGS OF THE 2009 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE（2009）

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摘要

This paper presents the implementation of a key technology developed for high density 3-D integration by circuit stacking. Direct copper bonding at room temperature, atmospheric pressure and ambient air of copper pads allowed the elaboration of a 10x10 mu m vertical interconnect with a contact resistance of 10 mohms. First tests on tungsten bonding will be also reviewed.

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关键词

annealing,probability density function,temperature,cmos technology,data mining,contact resistance,tungsten,atmospheric pressure,cu,room temperature,copper,silicon,microscopy

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