磁性隧道结Ni80Fe20/Al2O3/Co的制备和物性
PHYSICS（2000）
Abstract
用等离子体氧化形成绝缘层的方法,重复性地制备出了Ni80Fe20/Al2O3/Co磁性隧道结.样品的隧道磁电阻(TMR)比值在室温下最高可达6.0%,翻转场(switch field)可低于800A/m,平台宽度约2400A/m.结电阻的变化范围从几百欧姆到几百千欧.
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