Кремний-германиевые приборные наноструктуры для применения в оптоэлектронике

Influence of technological parameters (temperature of substrate, number of Ge layers, ion treatment) on optical properties of Si/Ge nanostructures with Ge quantum dots have been studied. The Raman scattering lines related to the Si-Si, Ge-Ge and Si-Ge vibration modes have been detected in the Raman spectra of Si/Ge nanostructures. A significant enhancement of intensity of luminescence band at 0.8 eV related with radiative recombination on Ge quantum dots is observed after hydrogen-plasma ion treatment of Si-Ge nanostructures. It is important for increasing of the luminescence quantum efficienty of devices on the base of Si nanolayer with Ge quantum dots.