Reliable ICs fabricated using a production GaAs HBT process for military and commercial applications

F M Yamada,A K Oki,D C Streit,D R Umemoto,L T Tran,K W Kobayashi,P C Grossman,Tom Block,M D Lammert, Stephen Olson,J Cowles,M Hoppe,S B Bui,D M Smith, K Najita, H Hennecke, E A Rezek

MILCOM 95 - CONFERENCE RECORD, VOLS 1-3（1995）

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Abstract

Reliability performance of a complex analog integrated circuit (IC) fabricated using a production GaAs-AlGaAs heterojunction bipolar transistor (HBT) process technology is reported. Three temperature constant stress lifetest projects a median-time-to-failure of 5200 years for a monolithic five-stage logarithmic amplifier operating at a 125°C junction temperature. This technology is currently delivering both space-qualified Class “K” ICs to major government programs and high-volume, low-cost ICs for commercial applications. In addition to reliability performance, the advantages of HBTs for analog/microwave and digital functions in communication systems are highlighted

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Key words

communication systems,temperature,stress,telecommunication equipment,heterojunction bipolar transistor,gallium arsenide,communication system,space technology,production,junction temperature,hbt

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