Carbon Nanotube Field Effect Transistors for High Speed Electronics

The frequency-independent performance of a carbon nanotube field effect transistor (CNT FET), at frequencies as high as 23 GHz, was demonstrated. The FET was fabricated using a top- gated geometry on a quartz substrate. The high frequency measurement was performed on this FET using a novel measurement approach, and for the first time we demonstrated the CNT FET continues to operate at frequencies up to 23 GHz without loss of gain. This observed maximum operating frequency represents a significant breakthrough in the realization of carbon nanotube-based electronics for low-power, high frequency applications.