Passivation of InGaAs/InAlAs/InP HEMTs using Al 2 O 3 atomic layer deposition

Joel Schleeh,J Halonen,Bengt E W Nilsson,P A Nilsson,L J Zeng,P Ramvall,Niklas Wadefalk,Herbert Zirath,Eva Olsson,Jan Grahn

international conference on indium phosphide and related materials（2011）

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Abstract

InGaAs/InAlAs/InP HEMTs (InP HEMTs) passivated by Al 2 O 3 atomic layer deposition (ALD) demonstrated improved DC performance compared to Si 3 N 4 plasma enhanced chemical vapour deposition (PECVD). DC measurements have been performed on 130 nm gate-length devices before and after passivation. An increase in maximum drain current density of 20% and extrinsic transconductance of 30% were observed after both ALD and PECVD device passivation. In comparison to PECVD passivated InP HEMTs, ALD passivated devices demonstrated a full suppression of a kink in the I-V characteristics associated with surface traps.

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Key words

hemt,atomic layer deposition,gallium arsenide,logic gates,passivation,current density

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