Development of Yellow and White LED's Using InGaN-based Multi-Quantum well Structures

In recent years, InGaN-based LED's emitting in the blue and green spectral regions have emerged into widespread use. However, due to fundamental material issues, achieving yellow and red emission from InGaN-based structures has presented a unique challenge. We have developed conditions for the MOCVD growth of a series of InGaN-based MQW devices that emit over a wide spectral range (420nm - 600nm). It has been found that the emission properties of these monochromatic devices depend critically on the growth rate, growth temperature, QW width, barrier growth conditions, and p-type capping layer growth conditions. Additionally, we have demonstrated white electroluminescence through the proper mixing of complementary colors.