Method of fabricating a semiconductor structure including one device region having a metal gate electrode located atop a thinned polygate electrodeA Callegari,Tzechiang Chen,Michael P Chudzik,Bruce B Doris,Younghee Kim,Vijay Narayanan,Vamsi Paruchuri,M Steen,Ying Zhangmag(2010)引用 25|浏览3暂无评分AI 理解论文溯源树样例生成溯源树,研究论文发展脉络Chat Paper正在生成论文摘要