An Efficient 290 Ghz Harmonic Oscillator In Transferred-Substrate Inp-Dhbt Technology

2015 45TH EUROPEAN MICROWAVE CONFERENCE (EUMC)(2015)

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摘要
This paper presents a single-ended efficient 290 GHz harmonic oscillator, realized using 0.8 mu m transferred-substrate (TS) InP-DHBT technology. The architecture of this oscillator is based on a third harmonic generation from a fundamental differential cross-coupled topology. The oscillator delivers -8.5 dBm output power. DC consumption is only 28 mW from a 1.5 volts power supply, which corresponds to 0.5 % overall DC-to-RF efficiency. To the authors' knowledge, this is the highest DC-to-RF efficiency harmonic oscillator beyond the 220 GHz frequency band published so far.
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关键词
Harmonic oscillator,transition frequency (f(t)),maximum oscillator frequency (f(max)),InP-DHBT,transferred-substrate (TS),sub-millimeter-wave,signal source,THz,Sub-THz
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