Band Gap Of Hexagonal Inn And Ingan Alloys

Vy Davydov,Aa Klochikhin,Vv Emtsev,Av Sakharov,Sv Ivanov,Va Vekshin,F Bechstedt, J Furthmuller,J Aderhold,J Graul,Av Mudryi,H Harima,A Hashimoto, A Yamamoto, J Wu, H Feick,Ee Haller

10TH INTERNATIONAL SYMPOSIUM ON NANOSTRUCTURES: PHYSICS AND TECHNOLOGY（2003）

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摘要

We present results of photoluminescence studies of the band gap of non-intentionally doped single-crystalline hexagonal InN layers and In-rich In(x)Ga(1-x)N alloy layers (0.36 < x < 1). The band gap of InN is found to be close to 0.7 eV. This is much smaller than the values of 1.8 eV to 2.1 eV cited in the current literature. A bowing parameter of b approximate to 2.5 eV allows one to reconcile our and the literature data for the band gap values of In(x)Ga(1-x)N alloys in the entire composition region.

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关键词

III-V semiconductors,absorption and reflection spectra,photoluminescence,electronic structure

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