High accuracy temperature bipolar modeling for demanding Bandgap application

F Pourchon, H Beckrichros,C Raya, C Faure, B Gautheron,Jeanpierre Blanc,B Reynard,D Celi

2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting（2007）

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摘要

V _DD reduction in advanced CMOS IC's push for reduced temperature stability spread of bipolar based BGR. To achieve this goal, a reliable extraction methodology for I _C temperature coefficient is detailed. Based on corner lot measurements, a worst-case bipolar model is built. Bandgap circuit measurements are finally compared to statistical simulations.

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关键词

Bandgap reference circuit,bipolar modeling,temperature coefficient,substrate PNP

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