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多層SiCN鋳型を用いたT型ゲート電極を持つInGaAs HEMT(化合物半導体テバイス及び超高周波テバイス/マイクロ波一般)

智洋 吉田,健悟 小林,泰一 尾辻,哲也 末光

mag（2013）

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