SiGe HBT featuring fT > 600GHz at Cryogenic Temperature
ECS Transactions（2008）
Abstract
A comparison of electrical performances of state-of-the-art SiGe heterojunction bipolar transistors at low temperature is presented. The performances increase results from the diminution of transit times thanks to the rise of non-stationary transport, the relative increase of the transconductance with the reduction of self-heating effects, and the decrease of access resistances.
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Key words
600ghz,temperature
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