Near infrared frequency dependence of high-order sideband generation
AIP Conference Proceedings(2013)
摘要
The near infrared frequency dependence of high order sideband generation in InGaAs quantum wells is discussed. The NIR frequency dependence of the sidebands indicates that the HSG phenomenon is excitonic in nature.
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关键词
Exciton,Quantum Well,Recollision,Sideband Generation
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