Cd Error Budget Of Cp Exposure

PHOTOMASK TECHNOLOGY 2011(2011)

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Abstract
We evaluate the projection fidelity of the Cell Projection (CP) using the Multi column cell (MCC) proof of concept (POC) tool [1-6]. The CP technology is originally developed as a method for reducing the shot counts of E-beam lithography systems. However, the higher repeatability of the shape is expected because the fixed size CP mask openings are used for each pattern. In the process of writing patterns by E-beam, the pattern deformation is inevitable due to the beam blur, proximity effect, and beam shaping error. If the model of beam deformation is established, the correction for the pattern deformation by modifications of CP mask opening shape can be carried out instead of additional shots. As a result, the shot count will be reduced.In this paper, we focused on Corner Rounding (CR) and Line End Shortening (LES) as two-dimensional properties of pattern deformation. Two-dimensional deformation should be decomposed in two components. One is the deformation in the process of CP mask manufacturing, and another is the deformation in the exposure process by e-beam writer tool. CP mask has been manufactured, measured and analyzed by Toppan printing. And using the CP mask, the exposure process error is measured by Advantest. By comparing the results, we evaluate the net amount of CP deformation caused in exposure process. Finally we confirmed the two-dimensional deformation is predictable by blur length that is obtained by one-dimensional CD-dose curve analysis.
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Key words
electron beam exposure system, character projection(CP), corner rounding(CR), line end shortening(LES), membrane mask, resolution
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