Stability of High Performance P-Type SnO TFTs

C. W. Zhong, H. Y. Tsai, H. C. Lin,K. C. Liu,T. Y. Huang

PROCEEDINGS OF THE 22ND INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA 2015)（2015）

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Abstract

High performance p-type SnO TFTs were fabricated and characterized in this work. Owing to thermal oxygen annealing process, the originally tin-rich oxide film was transformed into a polycrystalline SnO, resulting in decent field-effect mobility and high on/off current ratio. Electrical stability was evaluated by examining the threshold voltage shift under negative bias stresses at different stress times. A scenario considering the passivation/de-passivation of acceptor defects in the channel and the hole trapping of the gate oxide is proposed to explain the observed instability of the SnO TFTs.

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Key words

p-type SnO TFT,thermal oxygen annealing process,tin-rich oxide film,polycrystalline SnO,field-effect mobility,threshold voltage shift,negative bias stress,acceptor passivation,hole trapping,SnO

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